incorporate hundreds of millions of semiconductor devices (transistors, diodes, optical devices, etc.). To predict the performance of the VLSI circuits, the current-voltage (I-V) characteristics of the semiconductor device are required. Semiconductor device simulation codes provide a way of predicting I-V curves as device parameters are varied, without having to fabricate the device first. (The...

Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Most power MOSFETs feature a vertical structure with Source and Drain on opposite sides of the wafer in order to support higher current and voltage. Figure 1a and 1b show the basic device structure...

A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowir...

Natural type IIa diamonds were implanted with boron at 77 K, using a multiple step, low temperature boron ion implantation procedure to produce an approximately uniformly doped p-type layer of about 200 nm thickness. This layer was used to fabricate metal insulator semiconductor field effect transistor devices operating in the depletion mode, with good uniformity from device to device. Two of t...

Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...

We present a quantum and classical theory of electronic devices with one–dimensional (1D) channels made of a single carbon nanotube or a semiconductor nanowire. An essential component of the device theory is a self–consistent model for electrostatics of 1D systems. It is demonstrated that specific screening properties of 1D wires result in a charge distribution in the channel different from tha...

This paper presents the variation law of temperature in three-dimensional space, which is cooled by the refrigeration provided by the cold side of a semiconductor. The mathematical model of the temperature field of the semiconductor refrigeration device is described, and a numerical study on the temperature profile in a semiconductor refrigeration device was carried out using this model. The pr...

A Hybrid Hall effect device utilizes the magnetic fringing field at the edge of a ferromagnet to produce Hall effect in the two dimensional electron gas confined in a semiconductor structure underneath the magnet. Addition of an electrostatic gate to this passive device provides an extra handle in the form of the gate bias to modulate the output Hall voltage. We demonstrated that silicon MOSFET...

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and a...