The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

The comparator is designed in pipelined ADC. FINFET is the technology which performs the dual gate MOSFET. This thesis focuses on the high-speed design of pipelined ADC. In the meanwhile, we try to minimize the power dissipation as well. In this thesis, A semidigital Gm-based amplifier is proposed for a low-power pipelined analog-to-digital converter (ADC )in HSPICE .And also we compare the pow...

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

Fig. 1. FinFET device structures. (a) Shorted-gate FinFET. (b) Independent-gate FinFET. Abstract—An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM ...

Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. In this paper, the super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. The supply voltage of the super-threshold circuits is much larger than the threshold voltage of the transis...

In this paper, a fin-shaped field effect transistor (FinFET) structure which uses ground plane concept is proposed and theoretically investigated. The ground plane reduces the coupling of electric field between the source and drain reducing drain-induced barrier lowering (DIBL). To assess the performance of the proposed structure, some device characteristics of the structure have been compared ...

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also inves...