نتایج جستجو برای: formation interface
تعداد نتایج: 723294 فیلتر نتایج به سال:
In this study, the effect of temperature on the microstructure and reactive layer at the interface between the Ti interlayer and the base metal related to the diffusion bonding of Zr702 to A516 low alloy steel was investigated. The joining was done using the spark plasma sintering technique at temperatures of 900, 950 and 1000°C for 30 minutes. Field Emission Scanning Electron Microscope (FESEM...
In this study, the effect of temperature on the microstructure and reactive layer at the interface between the Ti interlayer and the base metal related to the diffusion bonding of Zr702 to A516 low alloy steel was investigated. The joining was done using the spark plasma sintering technique at temperatures of 900, 950 and 1000°C for 30 minutes. Field Emission Scanning Electron Microscope (FESEM...
FSW material flow and phase transformation were studied at the interface of dissimilar welding of Al 6013 to Mg. Defect free butt weld was obtained when aluminum and magnesium test plates were placed in the advancing side and retreating side respectively, and the tool was placed 1 mm off the weld centerline into the aluminum side. In order to understand how the materials flow during FSW, steel ...
BACKGROUND Blood-contacting devices have contributed to improving the treatment of patients. However, thrombus formation at the interface between a connector and tube is still a potential source of thrombus-related complications that induce stroke or myocardial infarction. We aimed to develop a non-blood-contacting real-time method for visualizing thrombus formation, and to experimentally inves...
Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...
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