The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided ...

Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1−xCoxO2−δ thin film is studied from 10 K to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity σAHE is found to be propor...

Accurate modeling of the anomalous electron mobility is crucial for successful simulation of Hall thrusters. Existing computational models for the anomalous electron mobility are used to simulate the UM/AFRL P5 Hall thruster in a 2D axisymmetric hybrid PIC-MCC code. Comparison to experimental results indicates that while these computational models can be tuned to reproduce the correct thrust or...

Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systemat...

We propose a scaling model for the universal longitudinal conductivity near the mobility edge for the integer quantum Hall liquid. We fit our model with available experimental data on exponentially activated conductance near the Landau level tails in the integer quantum Hall regime. We obtain quantitative agreement between our scaling model and the experimental data over a wide temperature and ...

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carrie...

We show the existence of intrinsic localized spins in mesoscopic high-mobility GaAs/AlGaAs heterostructures. Non-equilibrium transport spectroscopy reveals a quasi-regular distribution of the spins, and indicates that the spins interact indirectly via the conduction electrons. The interaction between spins manifests in characteristic zero-bias anomaly near the Fermi energy, and indicates gate v...

We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used ...

In situ studies of the superconducting and normal-state transport properties in partially oxygen-depleted, metallic YBa2Cu3Ox (Tc ,mid'52 K) thin films exposed to long-term white-light illumination ~photodoping! are reported. We observed that the effects of photoexcitation strongly depended on the temperature at which the photodoping was performed. The Hall number increased during the illuminat...

The properties of the Hall effect in relatively pu e,I lightdoped semiconductors are now generally well understood. Howeverthe Hall effect and mobility in heavily-doped semiconductors, whhave metal-like behavior, have been studied much less experimentand are still not fully understood theoretically. This paper reviews the Hall effect and related properties of heavily-dop...