Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain were in nature. Boron-doped p-channel diamond reported date display the less attractive ON characteristics. Here, transistor delivered a current level of ~1.5 <inline-formul...

This paper presents an application of swarm intelligence technique namely Artificial Bee Colony (ABC) to extract the small signal equivalent circuit model parameters of GaAs Metal Extended Semiconductor Field Effect Transistor (MESFET) device and compares its performance with Particle Swarm Optimization (PSO) algorithm. Parameter extraction in MESFET process involves minimizing the error, which...

Tendency and requirement to transform and process information quickly forced us todesign and make circuits that can work in high frequency.. At this time there are differenttypes of high frequency devices for which their models for CAD are necessary. As far as I knowin the latest version of Spice only a class of five types of the MESFET model is available.Because of Advanced ANN training create...

In this paper, we review recent developments in quasi-optical power combining. In particular, we examine planar periodic grids and their use as quasi-optical active components. A variely of grids used for the generation and amplification of electromagnetic radiation have been investigated. Although quasi-optical techniques are applicable to a large variery of solid-state devices, special attent...

Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...

A theoretical model for the I-V characteristics of buried-gate GaAs metal semiconductor field-effect transistors has been developed by solving dc continuity equation. This analysis includes the ion implanted buried-gate process. It is shown that the currentvoltage could be rather increased when introducing an optical fiber to the buried-gate GaAs MESFETs structure. The current -voltage characte...