We report the nonselective plasma etching of epitaxial GaN:Mg, Al0.63Ga0.37N, and AlN/Al0.08Ga0.92N short-period superlattices with various doping properties. Etching is performed using mixed CF4/Ar feed gases in a combined inductively coupled plasma and reactive-ion etching chamber. A uniform etch rate of ,23 nm/min is obtained for each of the compositions studied under identical conditions. T...

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy dist...

Plasma etching processes have a potentially large number of sensor variables to be utilized, and the number of the sensor variables is growing due to advances in real-time sensors. In addition, the sensor variables from plasma sensors require additional knowledge about plasmas, which becomes a big burden for engineers to utilize them in this filed. Thus an effective procedure for sensor variabl...

We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabricat...

High speed directional etching of non conventional materials like Quartz, Lithium Niobate and Lead Titanate is still insufficiently developed for producing high aspect ratio microstructures. Compared to deep silicon etching, the plasma etching of these materials has suffered from limitations in achievable depth, aspect ratio, verticality and smoothness of surfaces. Deep etching with nearly vert...

The fabrication of the 2D GaN-based photonic crystal structure at optical scales, a subμm scale in our case is very challenging. In our work, a double-etching method proved to be feasible to achieve the periodic GaN/air variation. The pattern was defined in a PMMA resist by electron-beam lithography and transferred to SiO2 by reactive ion etching (RIE) in a CF4 plasma and further into GaN by RI...

ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...

This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF6/O2 gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricate...

Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct. This paper uses a 35-run D-optimal design to efficiently collect data under well planned conditions for important controllable variables such as power, pressure, e...