Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...

By introducing strain into semiconductor lasers using GaAs/Gai-xlnxAs quantum wells, their modulation bandwidth has been increased to beyond 20 GHz1'2'3& Our approach to high modulation bandwidth strained layer quantum well lasers has been to fabricate short cavity (less than 1OO.tm) multiple quantum well structures. In order to fabricate lasers of this length, the facets must be etched by chem...

In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, ar...

Static properties, relatively intensity noise and intensity modulation response in quantum cascade lasers (QCLs) studied theoretically in this paper. The present rate equations model consists of three equations for the electrons density in the conduction band and one equation for photons density in cavity length. Two equations were derived to calculate the noise and modulation response. Calcula...