نتایج جستجو برای: semiconductor switch
تعداد نتایج: 119851 فیلتر نتایج به سال:
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.
Atomic switch is a nanoionic-device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path [1-3]. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is...
The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post...
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The results for the development of this proposed switch include the basics of the circu...
Parallel, standby and series configurations are different types of power switch configuration that can be considered in semiconductor switches to improve the reliability of power electronic converters and theirs lifetime, especially in specific application such as high power industrial applications, satellites, power electronic interface for renewable energies and etc. In this paper, the reliab...
Natural indicators of the electrical polarity of a direct current (DC) source is limited to semiconductor based diodes and transistors. Recently a novel bio-natural indicator of the polarity of a DC source have been reported. Mimosa Pudica or sensitive plant is found to be a natural detector of a DC source polarity, however the mechanism underlying this phenomenon is not known. This paper aims ...
The paper presents methods for the online estimation of the junction temperature (Tj) for IGBT modules with paralleled semiconductor chips, with each chip operating at different junction temperatures. Experimental and simulation results are presented. The Tj estimated from the gate-emitter voltage (Vge) during the IGBT switch off process was found to be very close to the average junction temper...
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