Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the ex...

Proton irradiation effects on strained Si 1.XGeX/Si heterostructures have been studied. For the experiment, p+-Sil -xGex/p--Si heterojunction diodes were fabricated by molecular beam epitax y (MBE) growth of strained p+boron doped SiGe layers on p -Si(100) substrates. Due to the valence band discontinuity between SiGe and Si layers, and degenerate doping in the SiGe layer, the characteristics o...

Introduction: SiGe pMOSFETs show considerable improvements in device performance due to the smaller hole effective mass exhibited by Ge.Further improvement in device performance can be obtained by growing pseudomorphically compressively strained SiGe on Si. Despite a lattice mismatch of ~4% between Si and Ge, researchers have been recently able to fabricate ultrathin body and nanowire pMOSFETs ...

Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off–current of 100 nA/μm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained–Si FDSOI–MOSFET always involves the larg...

This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm Lg Si0.50Ge0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations (SId/I 2 d) in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface ...

Based on comprehensive calibration to experimental device characteristics, Monte Carlo simulations have been performed to assess the device performance of sub100nm Si and strained Si MOSFETs with high-κ dielectrics, with and without consideration of soft optical phonon scattering induced by the introduction of high-κ dielectrics. The impact of interface roughness scattering on the performance e...

An accurate model for the inversion charge centroid of strained-Si on Si Ge metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simul...

In this project, versatile processing techniques are established for improving the internal and external quantum efficiencies of Si MOSLEDs via the detuning the size and density of high-aspect-ration Si nano-rod and buried Si nanospheres. A rapid thermal annealing synthesis of metallic nanodot array is realized to control the size and density control of metallic nanodots as an etching mask for ...

Dopant diffusion in semiconductors is an interesting phenomenon from both technological and scientific points of view. Firstly, dopant diffusion is taking place during most of the steps in electronic device fabrication and, secondly, diffusion is related to fundamental properties of the semiconductor, often controlled by intrinsic point defects: self-interstitials and vacancies. This thesis inv...