In this work, low frequency noise in β-Ga2O3 nanowire-based (NW) electronic devices is analyzed, which exhibits different behaviors as the device size scales down. The spectrum for narrower NW (∼80 nm) closer to 1/f characteristics, whereas it starts show evident 1/f2 components gets thicker (∼200 nm), giving clear signs of distinctive features bunch traps at interface or bulk. Our results that...
