We present an analytical low-field electron mobility formula for silicon which treats the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte-Carlo (MC) calculations which are based on a theoretical approach to ionized impurity scattering that inherently distinguishes the dopant species. From these first principle data we derive...

Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm(2) V(-1) s(-1) ...

Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...

We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be -5.93 and -3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto q...

Electrons floating above liquid helium form an ideal two-dimensional system with an extremely high mobility. However, the mobility can change substantially when decreasing the thickness of the helium film from bulk to a thin film of a few hundred Å. Furthermore it is observed that for certain film thicknesses there is a pronounced dip in the mobility. We present theoretical investigations and m...

We have studied the electron mobility in the AlN/GaN/AlN heterostructures with the nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of th...

The calculated electron Hall Mobility and Hall scattering factor in n-type 6H-SiC based on numerical solutions to the Boltzmann transport equation are presented. These results were obtained by solving the Boltzmann equation exactly for the electron Hall mobility using the contraction mapping principle and the electron drift mobility with Rode’s iterative method. The relative importance of the v...

We investigate the effects of electron and acoustic phonon confinements on the low-field electron mobility of thin, gated, square silicon nanowires SiNWs , surrounded by SiO2. We employ a self-consistent Poisson–Schrödinger–Monte Carlo solver that accounts for scattering due to acoustic phonons confined and bulk , intervalley phonons, and the Si /SiO2 surface roughness. The wires considered hav...