Oxidative etching of graphene flakes was observed to initiate from edges and the occasional defect sites in the basal plane, leading to reduced lateral size and a small number of etch pits. In contrast, etching of highly defective graphene oxide and its reduced form resulted in rapid homogeneous fracturing of the sheets into smaller pieces. On the basis of these observations, a slow and more co...

Scanned beams of 0.1 MeV/u Au ions were employed for the bombardment of silicon oxide films thermally grown on silicon (1 0 0) substrates. Subsequently the films were etched in aqueous HF solution (1% and 4%) for various times and at different temperatures. Scanning force microscopy and transmission electron microscopy images of etched films reveal conical holes with diameters from 20 to 350 nm...

Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...

In this paper we introduce our virtual etching as part of MAGDA a CAD system for Micro Electro Mechanical Systems (MEMS). Virtual prototyping visualizations require fast algorithms for visualization that are suitable for interactive design. Modern MEMS simulators do not offer dynamic visualizations for etching. Etching progress is time dependent, typically calculated with Finite Element Analysi...

Background: The purpose of this study was to investigate the effect of etching time using 9% hydrofluoric acid on Fracture Load (FL) and surface properties, such as Surface Free Energy (SFE) and Surface Roughness (SR) of three CAD/CAM glass-ceramics. Methods: Following glass-ceramics were investigated: EMP (IPS Empress CAD), KLE (KLEMA CAD/CAM glass-ceramic) and EMC (IPS e.max CAD). For FL, sta...

When etching high-aspect-ratio silicon features using deep reactive ion etching DRIE , researchers find that there is a maximum achievable aspect ratio, which we define as the critical aspect ratio, of an etched silicon trench using a DRIE process. At this critical aspect ratio, the apparent etch rate defined as the total depth etched divided by the total elapsed time no longer monotonically de...

background and aims. er:yag laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. the aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following er:yag laser and/or phosphoric acid etching. materials and methods. the roots of ...

Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...

We have observed three-dimensional sponge-like structures as well as strips of connecting pits on the surface of the LR 115 detector after etching, which can be confused with the small tracks formed after short etching time. We have employed an atomic force microscope (AFM) to study these “damages” as well as genuine alpha tracks for short etching time. It was found that while the track and dam...

AIMS These were to firstly evaluate the shear bond strength of a composite resin to primary dental enamel treated with a standard adhesive system but with varying phosphoric acid etching times along with a self-etching prime, secondly to analyse the etching patterns using SEM. METHODS Forty primary molars were used. In the first three groups, following acid etching, a layer of Prime & Bond NT...