Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...

Semiconductor nanowires are possible candidates to replace the metal-oxide-semiconductor field-effect transistors (MOSFET) since they can act both as active devices or as device connectors. In this article, the transmission coefficients of Si and GaAs nanowires with arbitrary transport directions and cross sections are simulated in the nearestneighbor sp3d5s∗ semi-empirical tight-binding method...

We propose a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferromagnet or half-metallic compound). The photocurrent flowing in such a system is shown to depend on its magnetic configuration. This, in turn, allows controll...

Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. A lightly doped channel has been taken to enhance the device performance and reduce short channel effects (SCEs) such as drain induced barrier lowering (DIBL), sub threshold slope (SS), hot carrier effects (HCEs), channel...

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with...

We report electrical measurements of ' a sandwich structure consisting of a niobium electrode in contact with a thin lightly doped n type InGaAs layer. The bottom of the sandwich is a degenerate layer of n-type InGaAs used to collect the current. The semiconductor layers are grown by molecular beam epitaxy (MBB). These three layers are the essence of the proposed superconducting-base, semicondu...

Colloidal quantum dots offer broad tuning of semiconductor band structure via the quantum size effect. In this paper, we present a detailed investigation on the influence of the thickness of colloidal lead sulfide (PbS) nanocrystals (active layer) to the photovoltaic performance of colloidal quantum dot solar cells. The PbS nanocrystals (QDs) were synthesized in a non-coordinating solvent, 1-oc...

The detailed study of random telegraph signal (RTS) currents and low-frequency (LF) noise in semiconductor devices in recent years has confirmed their cause and effect relationship. In this paper we describe the physical mechanisms responsible for RTS currents in any device. The methods for calculating the amplitudes and characteristic times of the RTS currents produced by traps with known elec...

In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 microV x K(-1). This direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results repres...