نتایج جستجو برای: hysteresis band

تعداد نتایج: 147106  

2001
Xiaoyan Wang Dan Y. Chen Alex Q. Huang

(ABSTRACT) As traditional control schemes, open-loop Hysteresis and closed-loop pulse-width-modulation (PWM) have been used for the switched reluctance motor (SRM) current controller. The Hysteresis controller induces large unpleasant audible noises because it needs to vary the switching frequency to maintain constant Hysteresis current band. In contract, the PWM controller is very quiet but di...

This paper presents a comparative analysis between two current control strategies, constant source power and generalized Fryze current, used in Active Power Filter (APF) applications having three different modulation methods. The Hysteresis Band (HB) and first-order Delta-Sigma Modulation (DSM) as well as the second-order DSM is applied. The power section of the active power filter is viewed as...

1999
X. A. Cao H. T. Hu Y. Dong X. M. Ding X. Y. Hou

A stable GaS passivating layer was deposited on GaAs using a-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra wi...

2011
D. A. Gadanayak

This paper presents a novel fuzzy control scheme applied to shunt active power filters for harmonic and reactive power compensation. A TSK type fuzzy logic controller is proposed for APF reference current generation. To control the maximum switching frequency of the converter within limit a novel fuzzy hysteresis band current controller is used. The band height, based on fuzzy control principle...

Journal: :International Journal of Engineering & Technology 2018

Journal: :TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES 2015

Journal: :ACS nano 2016
Yury Yuryevich Illarionov Michael Waltl Gerhard Rzepa Joon-Seok Kim Seohee Kim Ananth Dodabalapur Deji Akinwande Tibor Grasser

Black phosphorus has been recently suggested as a very promising material for the use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS2. We show that the recently demonstrated Al2O3 encapsulation leads to highly stable devices. In particular, we report our long-term study on high...

2007
Bryan A. Biegel

Several interesting behaviors of resonant tunneling diodes (RTDs) are investigated through numerical simulation: high frequency self-oscillations, strong intrinsic hysteresis, and pronounced static bistability. Each of these behaviors has been observed experimentally in RTDs, but the measured effects have been slower (oscillations), weaker (hysteresis, bistability), or required external inducta...

2009
Li Vigni G. A. Ummarino

We report on the magnetic-field-induced variations of the microwave surface resistance, Rs, in a polycrystalline MgB2 sample, at different values of temperature. We have detected a magnetic hysteresis in Rs, which exhibits an unexpected plateau on decreasing the DC magnetic field below a certain value. In particular, at temperatures near Tc the hysteresis manifests itself only through the prese...

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