Abstract Ion-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs been shown to enhance detection sensitivity beyond the Nernst limit 59 mV pH ?1 when back dielectric is much thicker than top dielectric. However, back-dielectric limits its application for ultr...

The operation of a pH (Hþ ion concentration) sensitive ion-sensitive field-effect transistor (ISFET) microsystem with a sensitivity of 40– 45 mV=pH is demonstrated. This system has two identical ISFETs as the inputs to a pair of ISFET operational transconductance amplifiers (IOTAs) arranged in a novel differential architecture. The IOTAs have different sized p-MOSFET load transistors that enabl...

The development of an immunosensor-based biosensor to detect the human serum albumin (HSA) was developed as a low-cost and label-free electrical detection through silicon nitride ion-sensitive field-effect transistor (Si3N4-ISFET). This sensor functionalized using 3-Aminopropyltriethoxysilane (APTES). silanized Si3N4-ISFET surface covalently linked with antibody against HSA (Anti-HSA) via gluta...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

An H⁺-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle referen...