The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

As the continuous down scaling of MOSFET device is required to increase the speed and packaging density of it, but it reduces the device characteristics in terms of short channel effect and reverse leakage current. At present, the single gate MOSFET reaching its scaling limit. These limitations associated with scaling give birth to number of innovative techniques which includes the use of diffe...

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We...

A full-band Monte Carlo (MC) device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET) structures. Simulated devices include a conventional MOSFET with a single source/drain implant, a lightly-doped drain (LDD) MOSFET, a silicon-on-insulator (SOI) MOSFET, and a MOSFET built on ...

The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedanc...

This paper provides the extracted values of the parameters affecting the threshold voltage model of SOI MOSFET. The parameter extraction is done for BSIMSOI4.3 MOSFET model. The proposed procedure is designed to give the results based on the device characteristics data. Simulations are performed using the extracted parameters and finally it is compared for extracted parameters and generic devic...

Normally off devices like Metal Oxide Semiconductor Transistors (MOSFET) are sensitive to light and can be controlled optically. These devices have high package density, low power consumption and dynamic operating range. In this paper modelling and simulation of MOSFET devices is carried out in 1GHz to 10GHz frequency band. Devices are controlled optically by varying optical power of incident r...

The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circuit cost and functionality, generating a new paradigm shift towards mobile computing. However, as the MOSFET dimensions are scaled below 30nm, electrostatic integrity and device variability become harder to control, degrading circuit performance. In order to overcome these issues, device engineers ...

-The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.

This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD