W ireless Metropolitan Area N e t w o r k s (WMAN) using the IEEE 802.16/ETSI HyperMAN standard will soon be ready for deployment to deliver broadband wireless access. WMAN development is spearheaded by the WiMAX Forum of telecommunications operators and equipment suppliers, with trial deployments planned for later this year. Industry analysts expect network deployments to accelerate during 200...

Based on a conventional flash architecture a 4-bit GaAs analog to digital (A/D) converter has been designed using OMMIC-Philips GaAs foundry and particularly its commercial enhancement/depletion mode 0.18 μm pHEMT technology process. The ADC operates at 7.5 GHz sampling rate with full power analog input bandwidth from DC to Nyquist frequency. Differential source coupled FET logic (SCFL) was use...

The use of 3D simulations is essential in order to study the effects of fluctuations when devices are scaled to deep submicron dimensions. A 3D drift-diffusion device simulator has been developed to effectively simulate pseudomorphic high electron mobility transistors (pHEMTs) on a distributed memory multiprocessor computer. The drift-diffusion equations are discretized using a finite element m...

As an extension of our previous works in the optical-microwave interaction field, this paper shows the result of the research on large signal dynamic behavior (Pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependent of the large signal mo...

An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...

This paper presents two low noise amplifier (LNA) circuit topologies for ultra-wideband wireless communications in 0.13μm PHEMT GaAs technology. They are with source inductive degeneration and source grounded, respectively. The simulation results show that the LNA involving source inductor possesses good performances at 120MHz-3GHz. Its noise figure(NF) and voltage standing wave ratios(VSWRs) a...

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...