نتایج جستجو برای: reactive ion etching

تعداد نتایج: 366052  

Journal: :Journal of the Magnetics Society of Japan 1999

Journal: :Transactions on Electrical and Electronic Materials 2005

2002
E. D. Walsby S. Wang J. Xu T. Yuan S. M. Durbin X.-C. Zhang D. R. S. Cumming

A multilevel microfabrication process has been developed to produce silicon Fresnel lenses for terahertz waves. A repeated binary fabrication process was used to create lenses with up to eight levels in complexity and these lenses have been compared to both less complex structures and refractive optic lenses. The microfabrication required deep reactive ion etching and multilevel resist processi...

2009
Julien Malapert Réda Yahiaoui Rabah Zeggari Jean-François Manceau

In this paper, we present an interesting method to microfabricate a tilted micro air jet generator. We used the well-know deep reactive ion etching (DRIE) technique in order to realize in a silicon substrate a double side etching. For aircraft and cars, micro air jets will take an important place for fluid control. Micro air jets are characterized by their speed, frequency and tilt. Usually, th...

2011
M. J. de Boer M. Dijkstra A. A. Kuijpers D. van Lierop R. J. Wiegerink

In this paper we present a tilting micro mirror with a large mirror surface of up to 2.5 mm x 1.0 mm and a large rotation angle of +/10° as needed for optical projection displays. The mirror is driven by vertical comb-drive actuators which are realized by a combination of deep reactive ion etching (DRIE) and a buried mask to provide selfalignment of the stator and rotor fingers in a silicon on ...

2010
Yung-Jr Hung San-Liang Lee Brian J. Thibeault Larry A. Coldren

A simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall an...

2011
Mingmei Wang Mark J. Kushner Rodney O. Fox Monica H. Lamm Vikram L. Dalal Baskar Ganapathysubramanian

Plasma etching (or dry etching) is widely used in the fabrication of integrated circuits (IC). Anisotropic features are easily obtained by controlling reactive ion trajectories in plasma. Twisting and bowing are two main issues during high aspect ratio (HAR) feature etching. Twisting is, instead of a feature etching vertically, the feature twists or turns to the side. Mixing damage by ion bomba...

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