نتایج جستجو برای: semiconductor doping
تعداد نتایج: 76507 فیلتر نتایج به سال:
Abstract: Electrical sensitivity of a boron nitride nanotube (BNNT) was examined toward (C3H4) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of methylacetylene (C3H4) the pristine nanotubes is a bout -1.78kcal/mol. But when nanotube have been doped with Si and Al atomes, the adsorption energy of me...
Abstract: Electrical sensitivity of a boron nitride nanotube (BNNT) was examined toward pyrrole (C5H6N) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of pyrrole on the pristine nanotubes is a bout -16.37kcal/mol. But when nanotube have been doped with Si and Al atom...
This paper concerns the identification of a so-called doping profile (source term) in the system of elliptic equations modeling a semiconductor device. We give several simplification of the model and find useful adjoint problems and asymptotics motivated by applications to inverse problems and by a presence of certain small physical parameters As a result we obtain first uniqueness results for ...
abstract: electrical sensitivity of a boron nitride nanotube (bnnt) was examined toward pyrrole (c5h6n) molecule by using density functional theory (dft) calculations at the b3lyp/6-31g (d) level, and it was found that the adsorption energy (ead) of pyrrole on the pristine nanotubes is a bout -16.37kcal/mol. but when nanotube have been doped with si and al atomes, the adsorption energy of pyrro...
The design of stacks of layered materials in which adjacent layers interact by van der Waals forces has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties as well as the emergence of novel physical phenomena and device functionality. Here, we report photoinduced doping in van der Waals heterostructures consisting of graphene ...
Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction fabricated and demonstrated with extremely low forward voltage reduced reverse current. The formation mechanism of proposed. To obtain G-doping, the surfaces p-type p+-type silicon substrates were patterned indents depth d = 30 nm. Ti/Ag contacts deposited on top G-doped lay...
Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped...
Ionizing chemical dopants are widely used in organic semiconductors to enhance the charge transport properties by increasing the number of mobile charge carriers. However, together with mobile charges, chemical doping produces anion-cation pairs in the organic matrix. In this work we use experimental and computational analysis to study the influence of these ionic species on the charge transpor...
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