R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S. Terada, T. Tsuboyma, Y. Unno, Y. Horii, Y. Onuki, D. Nio, A. Takeda, K. Hanagaki, J. Uchida, T. Tsuru, S.G. Ryu, I. Kurachi, H. Kasai, N. Kuriyama, N. Miura, M. Okihara, M. Motoyoshi a Graduate School of Pure and Applied Sciences, Univ. of Tsukuba,Tsukuba, Ibaraki 305-8571, Japan b High Energy Accelerator Research Org.,T...

We present a silicon-on-insulator (SOI) pass-transistor logic (PTL) gate with an active body bias control circuit and compare the proposed PTL gate with other types of PTL gates with different body bias circuits in two different 0.13μm SOI CMOS technologies. The experimental results show that the proposed SOI PTL gate using the body bias controlled technique is superior in terms of performance ...

Microring resonators on silicon-on-insulator substrate have been demonstrated to be promising in sensing applications. We study a microring resonator biosensor based on a novel subwavelength grating (SWG) waveguide structure, which consists of periodic silicon pillars in the propagation direction with a subwavelength period. In this structure, effective sensing region includes not only the top ...

We report on a fabrication process that uses SOI substrates and micromachining techniques to form wide-IF SIS mixer devices that have suspended metal beam leads for rf grounding. The mixers are formed on thin 25 mm membranes of Si, and are designed to operate in the 200–300 GHz band. Potential applications are in tropospheric chemistry, where increased sensitivity detectors and wide-IF bandwidt...

The proliferation of both Partially Depleted SiliconOn-Insulator (PD-SOI) technology and domino circuit styles has allowed for increases in circuit performance beyond that of scaling traditional bulk CMOS static circuits. However, interactions between dynamic circuit styles and PD-SOI complicate testing. This paper describes the issues of testing domino circuits fabricated in SOI technology and...

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-onInsulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer usin...

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silico...

An integrated variable delay receiver for DPSK optical transmission systems is presented. The device is realized in silicon-on-insulator technology and can be used to detect DPSK signals at any bit-rates between 10 and 15 Gbit/s. Keywordsdifferential phase-shift keying, interferometer, optical receiver, tunable delay-lines, silicon photonics