We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. By studying suitable choices of magnetic field and lateral dot size, we determine regions where the spin relaxation rates can be practi...

Spintronics is an emerging paradigm with the aim to replace conventional electronics by using electron spins as information carriers. Its utility relies on the magnitude of the spin-relaxation, which is dominated by spin-orbit coupling (SOC). Yet, SOC induced spin-relaxation in metals and semiconductors is discussed for the seemingly orthogonal cases when inversion symmetry is retained or broke...

The understanding of spin dynamics and relaxation mechanisms in clean graphene, and the upper time and length scales on which spin devices can operate, are prerequisites to realizing graphene-based spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with Rashba spin-orbit fields as low as a few tens...

In this chapter we investigate spin relaxation in thin silicon films. We employ a k p based approach to investigate surface roughness and phonon induced momentum and spin relaxation matrix elements. We show that the spin relaxation matrix elements strongly decrease with shear strain increased. In order to meet computational requirements with actual resources needed for relaxation time calculati...

We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for quantum dot nano-structures due to the combination of a band gap, spin-valley physics and strong spin–orbit coupling. First we will discuss which bound state sol...

With CMOS feature size rapidly approaching ultimate limits, electron spin is attracting attention as an alternative to the electron charge. Silicon appears to be the perfect material for spin-driven applications. Room-temperature electrical spin injection into Si from a ferromagnetic contact has been successfully demonstrated [1]. Silicon is mostly composed of nuclei with zero spin and characte...

The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice and spin-spin relaxation times of electrons. Minimizing the effects of spin-orbit coupling and the local magnetic contributions of neighbouring atoms on spin-lattice and spin-spin relaxation times at room temperature remain substantial challenges to ...

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel’ spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. T...

We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with disimilar dependences on doping density and temperature. Our theoretical...

The electron relaxation times Tt and T2 have been measured by ESR pulse techniques in solutions of normal and perdeuterated (diphenyl)" in dimethoxyethane at various radical concentrations and temperatures. The results are discussed in terms of different relaxation mechanisms. The most important contribution to spin-lattice relaxation at high concentration is dipolar interaction with other radi...