We report on titanium contacts to n-type and p-type Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si and material and electrical characterization of n-type and p-type platinum±silicide±germanide contacts to Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si. Ti contacts to n-type Si1ÿxÿyGexCy show rectifying behavior at low doping levels but become ohmic as layers reach 10 cmÿ3. Ti ...

Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...

Introduction As a new class of an ultra-high capacity anode material for Li-ion batteries, nano-Si/carbon composites have a considerable potential [1, 2]. In such composites, nano-Si can store lithium faster than bulk Si, and the carbon matrix serves nano-Si with an electrical path to compensate the poor electrical conductivity of Si. Though Si has an extremely high theoretical capacitance up t...

The use of nanometric size materials as embedded clusters, nanometric films, nanocrystalline layers and nanostructures is steadily increasing in industrial processes aiming to produce materials and devices. This is especially true in today Si-based microelectronics with transistors made of a multitude of different thin film materials (B-, As-, and P-doped Si, NiSi(Pt), poly-Si, W, TiOx, LaO, Si...

One of the principal economic drivers for the semiconductor industry is high performance, low power applications for the portable electronics consumer market. Unfortunately, the power dissipation resulting from the use of conventional CMOS technology in this area is becoming a critical design issue. Supply voltage reduction has been the preferred technique for reducing power dissipation. Howeve...

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the e...

A model describing the anisotropic electron mobility in strained Si has been developed. Our analytical model includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. Monte Carlo simulations were performed to verify the results for the complete range of Ge contents and for a general orientation of the SiGe buffer. Our m...

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density function...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...