A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the...

Based on the analysis of Poisson equation, an analytical threshold voltage model including quantum size effect of nc-TFTs (nanocrystalline silicon thin film transistor) has been proposed in this paper. The results demonstrate that the proposed simplified expression of threshold voltage agree perfectly with numerical calculation. The threshold voltage in nc-TFTs strongly depends on the size of s...

We have studied photo-induced effects in a p-type transistor based on a [1]benzothieno[3,2-b]benzothiophene (BTBT) derivative. Repetition of blue light irradiation and electrical characterization under dark reveals that its threshold voltage gradually shifts in the positive direction as the cumulative exposure time increases. This shift is slowly reversed when the transistor is stored under dar...

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson’s equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage rolloff is very important short channel effects(SCEs) for nano structures since it determines turn on/off...

Simulations of threshold voltage shift of a p-channel Ge/Si heteronanocrystal floating gate memory device were carried out using both a numerical two-dimensional Poisson–Boltzmann method and an equivalent circuit model. The results show that the presence of a Ge dot on top of a Si dot significantly prolongs the retention time of the device, indicated by the time decay behavior of the threshold ...

The threshold voltage shift of a p-channel Ge/Si hetero-nanocrystal floating gate memory device was investigated both numerically and phenomenologically. The numerical investigations, by solving 2-D Poisson-Boltzmann equation, show that the presence of the Ge on Si dot tremendously prolongs the retention time, reflected by the time decay behavior of the threshold voltage shift. The increase of ...

introduction: the ionic currents show nonlinear behavior and electrical stimuli can influence their activation and inactivation kinetics. the time constant of depolarizing or hyperpolarizing current pulses has an important role in the firing behavior of neurons. in the present study, the effects of quasitrpezoidal command potentials on l-type calcium channel of somata of f1 neuron in helix aspe...

Near-Threshold Voltage Computing (NTC), where the supply voltage is only slightly higher than the transistors’ threshold voltage, is a promising approach to push back the many-core power wall. A key NTC shortcoming is the higher sensitivity to parameter (process, supply voltage, temperature) variation. This report introduces a μ−architectural model to characterize increased sensitivity to proce...

Undoped-body MOSFETs are currently becoming increasingly important and the value of threshold voltage is often used to assess the reliability of fabricated devices. However there exists a disparity of threshold voltage criteria proposed for these novel devices. The concept of threshold voltage in undoped-body MOSFETs is examined and various existing criteria are analyzed and compared in an effo...