Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He⁺) bombardment and annealing on the contact resistance between graphene and various metals (Ag, Pd, and Pt) were systematically explored. It is found that the contact resistances between all metals ...

A contact transient electrothermal technique (CTET) is developed to characterize the thermal transport between one-dimensional conductive and nonconductive microscale wires that are in point contact. This technique is a significant advance from the transient electrothermal method that is used to characterize the thermophysical properties of individual one-dimensional micro-wires. A steadystate ...

Graphene-metal contact resistance limits the performance of graphene-based electrical devices. In this work, we have fabricated both graphene field-effect transistors (GFET) and transfer length measurement (TLM) test devices with titanium contacts. The purpose of this work is to compare the contact resistances that can be numerically extracted from the GFETs and measured from the TLM structures...

The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade mod...

Experimental measurements and modeling predictions were obtained to characterize the electro-mechanical response of two different gold contact radio frequency microelectromechanical system (RF MEMS) switches due to variations in the temperature and applied contact voltage. A three-dimensional surface roughness profile from AFM measurements of the top contact surface of a sample RF MEMS switch w...

If two half spaces are in contact, there exists a formal mathematical relation between the electrical contact resistance and the incremental elastic compliance. Here, this relation is extended to the contact of finite bodies. In particular, it is shown that the additional resistance due to roughness of the contacting surfaces (the interface resistance) bears a similar relation to the additional...

With the phasing out of lead-bearing solders, electrically conductive adhesives (ECAs) have been identified as an environmentally friendly alternative to tin/lead (Sn/Pb) solders in electronics packaging applications. Compared to Sn/Pb solders, conductive adhesive technology offers numerous advantages. However, this new technology still has reliability limitations. Two critical limitations are ...

Edge contact geometries are thought to yield ultralow contact resistances in most nonferromagnetic metal-graphene interfaces, owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus surface-contacted ferromagnetic metal-graphene interfaces (i.e., nickel- and cobalt-graphene interfaces) using both single-layer and few-layer graphene. Good q...

It is anticipated that future nanoelectronic devices will utilize carbon nanotubes (CNT) and/or single graphene sheets (SGS) as the low-level on-chip interconnects or functional elements. Here we address the contact resistance of Cu for higher level on-chip interconnects with CNT or SGS elements. We use first-principles quantum mechanical (QM) density functional and matrix Green’s function meth...

The dependence of contact resistance on current has been measured for a large number of ohmic contacts to quantized Hall resistors under quantum Hall effect conditioDS.Five different functional forms of current dependence are observed at low currents. The trend from best to worst quality can be correlated with the density of defects in the contact, regardless of the physical cause of the defect...