In this paper, two novel low-power and high-speed carbon nanotube full-adder cells in dynamic logic style are presented. Carbon nanotube field-effect transistors (CNFETs) are efficient in designing a high performance circuit. To design our full-adder cells, CNFETs with three different threshold voltages (low threshold, normal threshold, and high threshold) are used. First design generates SUM a...

Due to aggressive scaling and process imperfection in sub-45 nm technology node Vt (threshold voltage) shift is more pronounced causing large variations in circuit response. Therefore, this paper presents the analyses of various popular 1-bit digital summing circuits in light of PVT (process, voltage and temperature) variations to verify their functionality and robustness. The investigation is ...

This paper presents a high-speed and high-performance CNFET-based Full Adder cell for low-voltage applications. The proposed Full Adder cell is composed of two separate modules with identical hardware configurations which generate the Sum and Cout signals in a parallel manner. The great advantage of the proposed structure is its very short critical path which is composed of only two CNT pass-tr...

As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...

-For many years VLSI Chip designers have been using Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). As the channel length of device is reducing, effects like parametric variations and increase in leakage current have caused V-I characteristics to deviate from those of traditional MOSFETs. Hence the development of devices at deep submicron retards to some extent. Carbon Nanotube Fi...

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely expected to be the building blocks of next generation VLSI circuits. This chapter presents (1) the first purely CNT and CNFET based nanoarchitecture, (2) an adaptive configuration methodology for nanoelectronic design based on the CNT nano-architecture, and (3)...

Power consumption and data processing speed of integrated circuits (ICs) is an increasing concern in many emerging Artificial Intelligence (AI) applications, such as autonomous vehicles Internet Things (IoT). Existing state-of-the-art SRAM architectures for AI computing are highly accurate can provide high throughput. However, these SRAMs have problems that they consume power occupy a large are...

CNFET is generally considered to be one of the most appealing next generation transistors because of its high current carrying capacity and ballistic transport property. This paper investigates the performance analysis of Dual-X Current Conveyor with the CNFET technology, by varying the CNT diameter at 32nm technology node. Current Bandwidth, Input and Output Port resistances of the device alon...