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We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ~for Ga, Al, and Er! and a plasma gas source for N2. The emission spectrum of the GaN:Er...

Articles you may be interested in Structural and morphological characteristics of planar (112̄ 0) a-plane gallium nitride grown by hydride vapor phase epitaxy Appl. Two-step growth of high-quality GaN by hydride vapor-phase epitaxy Appl. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new function...

Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).

WE PRESENT THE MOLECULAR BEAM EPITAXY FABRICATION AND OPTICAL PROPERTIES OF COMPLEX GAAS NANOSTRUCTURES BY DROPLET EPITAXY: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is deve...

Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...

Articles you may be interested in Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires Appl. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy Polarity driven ...

This research program utilizes the chemical beam epitaxy laboratory and emphasizes the epitaxial growth of a wide variety of compound semiconductors (both Il-VI and Ill-V), as well as multilayered structures composed of II-VI/II-VI, II-VI/III-V and Ill-V/III-V heterostructures. The chemical beam epitaxy laboratory consists of two gaseous source epitaxy reactors (Il-VI dedicated and Ill-V dedica...

We present our results of (202̄1) GaN growth on (224̄3) patterned sapphire substrates. The substrates are patterned by etching trenches with c-plane-like side-facets. On these facets, the metalorganic vapor phase epitaxy (MOVPE) GaN growth starts in c-direction and forms triangularly shaped stripes eventually coalescing to a (202̄1) oriented layer. Xray rocking curves measured parallel to the stri...