Lanthanun oxide (La2O3) is a lanthanum chemical compound incorporates sensible anionic complexing ability; however, it lacks stability at low pH scale. Biochar fibers will give the benefit of their massive space and plethoric uses on surface to support metal compound. Herein, wet spinning technology was used load La3+ onto sodium alginate fiber, convert into La2O3 through carbonization. The La2...

We report on the defect generation under constant voltage stress in La2O3/HfO2 gate stacks grown on Germanium (001) substrates by molecular beam deposition utilizing a stress and sense technique. A voltage range from 0.5V up to 2.4V was used for the measurements. At low applied gate voltages, the stress induced current decrease could be explained by a field lowering model due to charge trapping...

The temperature e ect upon infrared-to-visible frequency upconversion uorescence emission in o -resonance infrared excited Yb-sensitized rare-earth doped optical glasses is theoretically and experimentally investigated. We have examined samples of Er3+/Yb-codoped Ga2S3:La2O3 chalcogenide glasses and germanosilicate optical bers, and Ga2O3:La2O3 chalcogenide and uoroindate glasses codoped with P...

−− Rh, Ni and Rh-Ni catalysts were prepared by wet impregnation of La2O3. The Rh content was modified but the Ni loading was kept constant at 2 wt%. The solids were calcined at 823 K in air flow and were reduced at 973 K in flowing hydrogen. The activity, stability, and residue formation during the CO2 reforming of CH4, of all the catalysts were tested in a fixed-bed reactor. Those with low car...

High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...

Film properties of TaN-based metal (TaCN and TaSiN) have been precisely controlled for plasma enhanced ALD (PEALD) and thermal ALD with additives of N2 or NH3. Film resistivity (ρ) strongly depended on the nitrogen concentration of TaN-based metal. These films showed conformal step-coverage for high-aspect (>6) 50nm-wide trenches. Consequently, ALD TaN-based metal is promising for microelectron...

High permittivity (k) gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a hig...

Bimetallic AuPd nanoparticles supported on TiO2 are known to catalyze the reduction of NO with CO. Here, we investigated effects addition lanthanum oxide a AuPd/TiO2 catalyst particle size 2.1–2.2 nm. The La2O3 enhanced catalytic activity; for example, at 250 °C, there was 40.9% conversion and 49.3% N2-selectivity AuPd/TiO2, 100% AuPd-La (1:1)/TiO2. temperature requiring dropped from 400 °C 200...

Using a W-La2O3 gated MOSFET structure, we report the effect of substrate and gate injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing nand p-channel MOSFETs with positive and negative...