A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed compared to a conventional (C-MOSFET) using numerical TCAD simulation. Due the (HJD) located at mesa region, reverse recovery time charge of IHP-MOSFET decreased by 62.5% 85.7%, respectively. In addition, high breakdown voltage (BV) low maximum oxide electric field (EMOX) could be achieved ...

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been in...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

1.1 CMOS downscaling to DG-MOSFETs As device scaling aggressively continues down to sub-32nm scale, MOSFETs built on Silicon on Insulator (SOI) substrates with ultra-thin channels and precisely engineered source/drain contacts are required to replace conventional bulk devices (Celler & Cristoloveanu, 2009). Such SOI MOSFETs are built on top of an insulation (SiO2) layer, reducing the coupling c...

A model for the simulation of the electron energy distribution in nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzmann transport equation, a nonlinear integrodifferential equation, for the distribution of electrons...

The limits on scaling suggest the technology advancement for the solid-state devices. The double-gate (DG) MOSFET has emerged as an alternative device structure due to the certain significant advantages, i.e. increase in mobility, ideal sub-threshold slope, higher drain current, reduced power consumption and screening of source end of the channel by drain electric field (due to proximity to the...

We aim at constructing a common platform for compact model development based on the Verilog-A language for collaboration among different research groups. The project aims in particular at a framework for efficient development of multi-gate MOSFET models for circuit simulation. We have developed several prototypes of multi-gate MOSFET models based on different concepts till now. Phenomena expect...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...