Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

This paper presents the 4~6GHz 6-bit MMIC digital attenuator with low phase shift. Phase compensation techniques were used in the MMIC design to reduce the phase shift. This attenuator is fabricated with 0.25μm GaAs PHEMT process. Simulation results of the developed MMIC chips in the 4~6GHz show that the 6-bit MMIC digital attenuator has 0.5dB resolution and 31.5dB dynamic attenuation range, in...

the graphical technique for nonlinear circuits was described that enable us to optimize circuits to obtain maximum output power, maximum efficiency or minimum intermodulation. according to this method a high power amplifier in the ka band was designed. using a nonlinear model of the transistor, optimum slope for load-line was determined so that maximum power at the output was obtainable, then ...

Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50Ω load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm ou...

In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1dB compression point ...

This paper describes the development of a low loss, high power, microwave switch MMIC design. The operating bandwidth of the switch was 7 to 11GHz. Simulated performance shows an insertion loss of 0.71dB at mid-band rising to 0.85dB at the band-edge. The estimated power handling capability of the switch is 6.3W at 1dB compression for 0/-10V control. Isolation is better than 27dB across the enti...

This paper describes the design and realization of a high performance linear power amplifier in the 2.4GHz band for the IEEE 802.11b/g WLAN (Wireless Local Area Network) and ISM (Industrial Scientific and Medical) applications using a proprietary 0.5um enhancement-mode Pseudomorphic High-Electron-Mobility Transistor (e-pHEMT) technology. The amplifier exhibits a linear power output of 18.5dBm a...

This paper overviews the microwave device modeling techniques based on machine learning. The proposed methods are divided into two categories, active and passive components modeling. These modeling techniques aim to characterize the microwave device efficiently and accurately. The active components consist of MESFET, HEMT, pHEMT, and so on. The passive devices include inductor, capacitor, Lange...

A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power amplifier applications. This approach combines physical, electromagnetic and thermal simulations to model large power transistors used in these applications, allowing both the individual finger contribution and the global performance to be investigated in an efficient manner, which can be used wit...

This paper presents an IDS(VGS,VDS) model to represent PHEMT behavior in the reverse ) 0 ( < DS V , and forward zone ) 0 ( > DS V . The model predicts with high accuracy the measured data as well as higher orders derivatives of the transconductance over a large range of VDS bias. These characteristics are important for the analysis of intermodulation distortion using harmonic balance or Volterr...