2014 A Schottky diode exhibits a barrier height which increases when the semiconductor doping is superficially inversed. This effect is modellized, so as to show the influence of the main parameters : doping and thickness of the inversion layer, interface state configuration, metal work function. The analysis of a few available experimental results is consistent with the assumption that the int...

We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measu...

A concept of doping that permits for the first time the freedom to design the desired activation energy of a dopant in a semiconductor is introduced and demonstrated. This doping engineering (DE) may also offer the possibility of achieving dopings in semiconductors in which a normally employed doping process is not successful, such as in wide band-gap IIVI semiconductors. Experimentally, we dem...

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...

Optical methods represent a powerful tool for contactless characterisation of materials in industrial processes. In particular, the microelectronic field great impetus has been given to the on-line measurement of the doping profiles in large scale productions in order to increase the overall equipment effectiveness. In this framework, we propose a new technique based on optical tomography able ...

The doping profile optimization in semiconductor has been tackled as a constrained optimization problem coupled with a drift-diffusion model to simulate the physical phenomenon. A new population-based algorithm, the Constrained Immunological Algorithm, has been introduced and the experimental results confirm that clearly outperforms previous state-of-theart algorithms in doping profile optimiza...

Diamond is a promising material for the next generation of high-power and high-frequency semiconductor devices. In terms of its physical properties: high carrier saturation velocity (2.7·10 cm/s), high electron and hole mobility at low doping level, and record thermal conductivity, diamond significantly exceeds other semiconductor materials. Diamond is a wide-band gap semiconductor/insulator (b...

Electrical sensitivity of a boron nitride nanotube (BNNT) was examined toward hydroquinone (C6H4(OH)2) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G(d) level, and it was found that the adsorption energy (Ead) of hydroquinone on the pristine nanotube is  a bout -7.77kcal/mol. But when nanotubes have been doped with Si and Al atomes, the adsorption energy of hy...