نتایج جستجو برای: si 3 and si 6
تعداد نتایج: 17209846 فیلتر نتایج به سال:
[Me(2)Si(Cp(Me(2)))(2)]W(H)Cl is obtained via reaction of WCl(6) with a mixture of [Me(2)Si(Cp(Me(2)))(2)]Li(2) and NaBH(4), from which the dichloride [Me(2)Si(Cp(Me(2)))(2)]WCl(2) is obtained via treatment with CHCl(3). [Me(2)Si(Cp(Me(2)))(2)]WCl(2) provides a means to access other ansa tungstenocene compounds, such as [Me(2)Si(Cp(Me(2)))(2)]WH(2), [Me(2)Si(Cp(Me(2)))(2)]WMe(2), and [Me(2)Si(C...
In this work, the effects of silicon (Si) supplementation were studied in pistachio (Pistacia veraL. cv Ahmadaghaii) plants exposed to high salinity stress. Plants were grown in pots undercontrol and salt (EC=15 dS m-1) conditions without or with Si treatment (0.35 g Na2SiO3 Kg-1soil) under field conditions. Salt stress reduced the plants’ growth significantly in both –Si and+Si plants; however...
Graphene films prepared by heating the SiC(0001̄) surface (the C-face of the {0001} surfaces) in a vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3 × 3 reconstructed interface, whereas the latter produces an interface with √ 43 ×√43-R ± 7.6◦ symmetry. This structure is shown to contain ...
The effects of metalloids Si(4-27 at%) and B(5-22 at%) on the structure and magnetic properties of melt spun cobalt based alloys containing 5at% Fe have been studied. XRD results revealed that in non-eutectic ternary CoFeSi and CoFeB alloys, the additions of Si or B, alone can not lead to full amorphization of melt spun ribbons. In quaternary CoFeSiB alloys, the total amounts of Si and B additi...
The preparation of silylamide Hauser base (R2NMgX; X = halide) and amido-Grignard (R2NMgR) complexes from simple Grignard reagents using [K{N(SiMe2(t)Bu)2}]n, [K{N(SiMe2(t)Bu)(Si(i)Pr3)}]n and [K{N(Si(i)Pr3)2}]n, and their parent silylamines, was explored. Both salt metathesis and protonolysis routes proved ineffective with allylmagnesium chloride as a starting material due to complex Schlenk e...
High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(...
در سطح آزاد نیم رساناها برای مثال سطح سیلیکن، حالت تناوبی اتم های بلور گسیخته می شود به طوری که بعضی از پیوندهای اتمی به صورت پیوندهای آزاد باقی می مانند. در نتیجه حالت های سطحی دهنده و یا پذیرنده زیادی در گاف نواری سطح سیلیکن وجود دارد. به طور مشابه در اتصال شوتکی فلز – نیم رسانا (ti-si)، حالت های میان گاهی الکترونیکی در گاف نواری القا می شوند. به هر حال حالت های سطحی (و یا میان-گاهی) توانایی ...
Partially deuterated Ca3Al2(SiO4)y(OH)12 4y–Al(OH)3 mixtures, prepared by hydration of Ca3Al2O6 (C3A), Ca12Al14O33 (C12A7) and CaAl2O4 (CA) phases in the presence of silica fume, have been characterized by Si and Al magic-angle spinning–nuclear magnetic resonance (MAS–NMR) spectroscopies. NMR spectroscopy was used to characterize anhydrous and fully hydrated samples. In hydrated compounds, Ca3A...
this study reports the fabrication of n-tio2/p-si hetrojunction by deposition of tio2nanowires on p-si substrate. the effect of system pressure and the current-voltage (i-v) characteristics of n-tio2/p-si hetrojunction were studied. the morphology of the samples was investigated by field emission scanning electron microscopy (fesem) which confirms formation of tio2 nanowires that their diameter...
This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...
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