Alloy composition homogeneity plays an important role in the device performance of III-V heterostructures. In this work, we study the spatial composition uniformity of n-In0.12Ga0.88As/i-In0.2Ga0.8As/p-GaAs core-shell nanopillars monolithically grown on silicon. Cross sections extracted along the axial and radial directions are examined with transmission electron microscopy and energy-dispersiv...

The aim of this work was WC distribution in base Al-Si-Mg (A356) alloy as reinforcing agent. WC Solid particles in the sub-23-nm size range added to melted alloy by centrifuge casting. The cylinder tube without gap was obtained. FESEM and OPM results show that the distribution depends upon the rotational speeds of the mould and centrifugal casting conditions. According to the MAP results, durin...

Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH4 and H2S or H2Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio RV = [chalcogen/ s...

In this article, failure and fracture mechanisms in an aluminum alloy (which has been used in diesel internal combustion engines), with and without ceramic thermal barrier coatings, have been investigated under isothermal and non-isothermal fatigue loadings. In this research, the base material is an aluminum-silicon-magnesium alloy and the thermal barrier coating includes a metallic bond coat l...

In this work the applicability of neopentasilane (Si(SiH(3))(4)) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowire...

AbstructThe etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, TVW alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-...

We describe a technique for accurately measuring the ratio between the imaginary and real parts of the third-order nonlinearity in optical waveguides. Unlike most other methods, it does not depend on precise knowledge of the coupling efficiencies, optical propagation loss, or optical pulse shape. We apply the method to characterize a silicon waveguide, a GaAs waveguide, and AlGaAs waveguides wi...

We report in situ tensile strength measurement of fully lithiated Si (Li-Si alloy) nanowires inside a transmission electron microscope. A specially designed dual probe with an atomic force microscopy cantilever and a scanning tunneling microscopy electrode was used to conduct lithiation of Si nanowires and then perform in situ tension of the lithiated nanowires. The axial tensile strength decre...