Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high...

We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...

Overview of Strained Silicon Technology With its physical limitations already in sight, industry and academic microelectronics research has been focused on developing new technologies to extend Moore’s Law. One of these viable technologies is strained silicon. The attractiveness of strained-Si is that it increases carrier mobility, can be easily integrated into current manufacturing processes, ...

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...

Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique a...

The premier observation on the enhanced light emission from such a metal-SiO(x)-Si light emitting diode (MOSLED) with Si nano-pyramids at SiO(x)/Si interface is demonstrated at low biases. The Si nano-pyramids exhibits capability in providing the roughness of the SiO(x)/Si interface, and improving the Fowler-Nordheim (F-N) tunneling mechanism based carrier injection through the novel SiO(x)/nan...

The extraction of renewable energy resources particularly from earth abundant materials has always been a matter of significance in industrial products. Herein, we report a novel simultaneous extraction of nano-silicon with activated carbons (nano-Si@ACs) from rice husk (RH) by chemical activation method. As-extracted nano-Si@ACs is then used as an energy harvesting materials in counter electro...

Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe film...

An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has been developed with the degradation due to total dose irradiation taken into consideration. Based on this model, the numerical simulation has been carried out by Matlab, and the influence of the total dose on channel current was simulated. Furthermore, to evaluate the validity of the model, the simulation ...

The micro and nano-structured amorphous carbon as p-type films prepared from natural palm oil precursor for heterojunction solar cell were presented. Field-emission scanning electron microscopy (FESEM) revealed the micro and nano structured films had particle size in the range of 382 nm to 689 nm and 28 to 34 nm, respectively. The energy-dispersive spectroscopy (EDS) showed the existing of carb...