In order to achieve a longer battery life suppression of energy consumption is vital. A demand for design methods for less energy consumption is increasing. The subthreshold scaling can reduce energy per cycle significantly by the scaling of supply voltage (VDD) below threshold voltage (Vth). Threshold voltage of CMOS technology represents the value of the gate-source voltage when the current i...

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...

Level shifters play critical roles in ultra low-voltage circuits and systems. a new low power level shifter (LS) is presented for robust logic voltage shifting from near/sub threshold to above threshold domain. The new circuit combines the multi threshold CMOS technique along with novel topological modifications to guarantee a wide voltage conversion range with limited static power and total en...

Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...

Dynamic CMOS logic circuits are used in high performance VLSI chips in order to achieve very high system performance. These circuits requires less number of transistors as compare to CMOS logic circuits Dynamic logic circuits are much affected by noise as compared to static CMOS circuit. This is due to the fact that dynamic logic circuits have lower value of switching threshold voltage, which i...

In the depletion approximation for n-channel MOS structures we have neglected the electrons beneath the gate electrode when the gate voltage is less than the threshold voltage, VT. We said that it is only when the gate voltage is above threshold that they are significant, and that they are then the dominant negative charge under the gate. Furthermore, we say that above threshold all of the gate...