Analysis and simulation are presented of the mismatched load condition for a balanced class-E power amplifier, which is based on 90° hybrids at its input and output. The performances of the 200-Watt balanced class-E amplifier, such as the output power and efficiency, were analyzed and compared to the conventional single-ended class-E power amplifier for the 1:3 VSWR mismatch condition. The simu...

Thin films of binary Bi 0 -TeO and Bi 0 -V 0 systems were prepared by the thermal co-evaporation technique in a vacuum at room temperature. The optical absorption edge of these systems are studied in the wavelength of 200-800 nm using a PERKIN-ELMER uv/Vis spectrophotometer. It is found that the value of n=3/2 in the Davis-Mott equation is best fitted for the fundamental absorption edge f...

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ETRI Journal, Volume 30, Number 1, February 2008 ABSTRACT⎯A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent ...

• Montelukast is an oral leukotriene receptor antagonist. It has had a UK licence since 1998 as addon therapy for the treatment of patients, 6 years or older, with mild to moderate asthma inadequately controlled on ‘as required’ short-acting β-agonists and inhaled corticosteroids. It is also licensed for prophylaxis of asthma in which the predominant component is exercise-induced bronchoconstri...

This paper presents results of investigation on the effects of technology on the performance of the class E power amplifier circuit. A typical class E circuit has been designed and simulated, for a typical UMTS Tx frequency (1.95 GHz) and output power ( 27dBm). Three different technologies have been used (silicon BJT, CMOS and GaAs HBT) and several important parameters (output efficiency, power...

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...