In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposed designs with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of sp...

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

Expressions for the “quantum capacitance” are derived, and regimes are discussed in which this concept may be useful in modeling electronic devices. The degree of quantization is discussed for oneand two-dimensional systems, and it is found that two-dimensional (2D) metals and one-dimensional (1D) metallic carbon nanotubes have a truly quantized capacitance over a restricted bias range. For bot...

Submitted for the MAR05 Meeting of The American Physical Society Diameter dependence of carbon nanotube transistor performance ZHIHONG CHEN, JOERG APPENZELLER, JOACHIM KNOCH, Institution fuer Schichten und Grenzflaechen, YU-MING LIN, PHAEDON AVOURIS, IBM T. J. Watson Research Center — As has been shown before, single wall carbon nanotube field-effect transistors (CNFETs) behave as Schottky barr...

There is a rapid need to explore the design issues of circuits in deep submicron nodes. This paper presents the design and performance analysis of Dual-X CCII, a widely used analog building block using state of the art Si CMOS and a proposed Hybrid (employing both CMOS and CNFET) configuration at 32nm. Current bandwidths port resistances along with power consumption have been chosen as the para...