Introduction Evaluation of the delivered dose of externally wedged photon beams by external diode dosimeters during the treatment process requires the estimation of exit surface dose correction factors in various wedge angles and field sizes. Materials and Methods A system of absorbed dose evaluation, using p-type diode dosimeters placed on the exit surface of a phantom, was characterized for e...

Due to the high sensitivity, nearly linear response, and easy availability, we will use a 1N4148 diode for the temperature transducer in our measurements. The current conducted through an ideal diode is described by the Shockley ideal diode equation: I D = I S exp q V D n k B T − 1 where q is the electron charge, k B is Boltzmann's constant, T is the temperature of the diode junction, and V D i...

Due to the high sensitivity, nearly linear response, and easy availability, we will use a 1N4148 diode for the temperature transducer in our measurements. The current conducted through an ideal diode is described by the Shockley ideal diode equation: I D = I S exp q V D n k B T − 1 where q is the electron charge, k B is Boltzmann's constant, T is the temperature of the diode junction, and V D i...

Due to the high sensitivity, nearly linear response, and easy availability, we will use a 1N4148 diode for the temperature transducer in our measurements. The current conducted through an ideal diode is described by the Shockley ideal diode equation: I D = I S exp q V D n k B T − 1 where q is the electron charge, k B is Boltzmann's constant, T is the temperature of the diode junction, and V D i...

Plasma-filled diode regarded as perspective source of electron beam feeding HPM generator of GW power level, comparing to conventional explosive emission vacuum diode. Electron beam generation occurs in plasma double layer, where plasma boundary plays as an anode. It allows cancelling the usage of anode foils or grids in HPM generators with the virtual cathode, which could limit its life time t...

In recent years, the developments in the OLEDs have gradually reached very advantageous of existence. These advantageous characteristics include self-luminous, wide viewing angle and low power consumption, etc. which make OLEDs very useful for numerous display applications and lighting devices. To effectively improve the characteristics of an OLEDs, there are many ways to be adopted. Such as: (...

New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOSbounded diodes can provide more efficient ESD protection to ...

The results of studies the influence thicknesses electron-blocking, hole-conducting and recombination layers on luminance-voltage other electrophysical characteristics a multilayer light-emitting diode with an active layer based semiconductor quantum dots are presented. Optimized voltages determined to achieve maximum efficiency electroluminescence diode. Keywords: dots, diode, blocking layer.

Previous experiments with the Raman FEL, situated at the Twente University, showed that the output was influenced by the rather strong increase of the current density with time . The field emission diode has been modified to produce a more constant current pulse to simplify the analysis of the measurements . This resulted in a lower current density of the electron beam . With this new diode two...