To continue improvement of CMOS device performance process induced uniaxial stress is widely adopted in logic technologies starting from the 90 nm technology generation. In this work we model stress induced electron mobility enhancement in ultra thin body (UTB) MOSFETs for (001) and (110) substrate orientation using the Monte Carlo method. Uniaxial stress effects on the band structure are incor...

Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phaseshift analysis. I...

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that twoto fivefold increase of the room temperature electron mobility can be achieved....

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and pimplanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and ch...

Electron mobility in GaN and InN are calculated, by solving Boltzmann equation using iteration model, as a function of temperature for carrier concentrations of 10 16 , 10 17 , and 10 18 cm -3 . Both GaN and InN have maximum mobility between 100 and 200 K, depending on the electron density. The theoretical maximum mobility in GaN and InN at 300 K are about 1000 and 4400 cm 2 V -1 s 1. We compar...