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In order to establish the growth of nonpolar GaN templates for subsequent overgrowth via hydride vapor phase epitaxy (HVPE) or subsequent device epitaxy we studied the growth of a-plane oriented samples on r-plane sapphire via metal organic vapor phase epitaxy (MOVPE). The growth parameters like reactor pressure, growth temperature and V/IIIratio for the nucleation layer as well as for the GaN ...

Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and m...

Same as Report (SAR) 18. NUMBER

Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy halide epitaxy. temperature dependence resistivity Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. me...

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