This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...

This paper describes an instrumentation amplifier (INA) with three operational amplifier (op amp) topology, for biomedical applications. To achieve low offset new circuit technique is achieved by adding NMOS transistor and two phase clock scheme with a frequency of 20 KHz. With the unity gain bandwidth of 92 KHz , the open loop gain of this instrumentation amplifier is found to be 50 dB and hav...

in this study an ultra-broad band, low-power, and high-gain cmos distributed amplifier (cmos-da) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. it is created bycascading of inductively coupled common-source (cs) stage and regulated cascode configuration (rgc).the proposed three-stage da is simulated in 0.13 μm cmos process. it achieves flat and high ...

The simplest high gain free electron laser (FEL) amplifier concept is proposed. A klystron amplifier has the useful property that the various electronic processes take place in separate portions of the amplifier, rather than overlapping as in FEL amplifier with an uniform undulator. The klystron consists of two fundamental parts: succession of 2-3 cascades (modulator), and an output undulator (...

This paper presents a design of the transimpedance amplifier using 0.35μm CMOS technology. In the proposed transimpedance amplifier, feedback resistor RF of conventional transimpedance amplifier has been replaced by NMOS transistor as an active feedback resistor. This circuit operates at 3.3V power supply voltage and for a photocurrent of 0.5μA.The proposed transimpedance amplifier having low n...

This paper presents the design and simulation of Low Noise Amplifier (LNA) in a 0.18μm CMOS technology. The LNA function is to amplify extremely low noise amplifier without adding noise and preserving required signal to noise ratio. Cadence design tool Spectre_RF is used to design and simulation based on resistors, inductors, capacitors and transistors. Power constrained methodology is used for...

Anyone who have designed a capacitively tuned VFO/VCO with the wide tuning range (>1.5-2x) has noticed that the oscillation threshold changes substantially with the tuning frequency. The usual solution to the problem is a combination of: 1. the AGC circuit, most frequently via the amplifier bias that changes the amplifier conduction angle; 2. shunting the LC circuit with a damping resistor or b...

This paper proposes a high gain and wide bandwidth amplifiers with numerical approach. It is improved that the low-frequency characteristics and the range of gain refers to direct-coupling. The gain is controlled with numerical approach,which makes the gain stability. It is easy to control the gain of the multistage amplifier with adopting uniform gain control voltage. It is useful for numerica...

A new CMOS fully differential bandpass amplifier (BPA) based on the structure of a transresistance (Rm) amplifier and capacitor is proposed and analysed. In this design, the Rm amplifier is realised by a simple inverter with tunable shunt-shunt feedback MOS resistor and tunable negative resistance realised by crosscoupled MOS transistors in parallel with a current source. The capacitor is in se...

A new wideband high gain CMOS transimpedance amplifier is presented without using any inductor. In the proposed TIA, enhancing path introduced in active voltage-current feedback TIA topology to increase both and bandwidth. This increases transconductance of which reduces input resistance leads bandwidth extension. Additionally, for utilizing benefit this topology, cascading common source stage ...