نتایج جستجو برای: hall mobility

تعداد نتایج: 163617  

2016
Hyeonju Lee Xue Zhang Jaeeun Hwang Jaehoon Park

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, a...

2002
M. A. Cappelli N. B. Meezan N. Gascon Mark A. Cappelli Nathan B. Meezan

An analysis of measurements supporting the presence of anomalous cross-field electron mobility in Hall plasma accelerators is presented. Non-intrusive laser-induced fluorescence measurements of neutral and ionized xenon velocities, and various electrostatic probe diagnostic measurements are used to locally determine the effective electron Hall parameter inside the accelerator channel. These val...

2005

2.1 Investment in education has played a central role in Sri Lankan government policy for several generations. Key aims of public education policy have included: (i) enhancing economic equity; (ii) promoting inter-generational social mobility; (iii) increasing labor productivity and earnings through human capital accumulation; and (iv) producing a healthy and prosperous society. The economic an...

2012
C. Strenger V. Häublein T. Erlbacher A. J. Bauer H. Ryssel A. M. Beltran S. Schamm-Chardon V. Mortet E. Bedel-Pereira M. Lefebvre F. Cristiano

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 ...

2009
J. Martin N. Akerman G. Ulbricht T. Lohmann K. von Klitzing J. H. Smet

Particle localization is an essential ingredient in quantum Hall physics. In conventional high-mobility two-dimensional electron systems such as in GaAs/AlGaAs semiconductor heterostructures, Coulomb interactions were shown to compete with disorder and to have a central role in particle localization. Here, we address the nature of localization in graphene where the carrier mobility, quantifying...

2012
Afarin Bahrami Zainal Abidin Talib Wan Mahmood Mat Yunus Kasra Behzad Mahnaz M. Abdi Fasih Ud Din

Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on t...

2013
Chiashain Chuang Li-Hung Lin Nobuyuki Aoki Takahiro Ouchi Akram M Mahjoub Tak-Pong Woo Jonathan P Bird Yuichi Ochiai Shun-Tsung Lo Chi-Te Liang

We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field Bc, an approximately temperature-independent point in the measured longitudinal resistivity ρxx, which is ascribed to the direct insulator-quantum Hall (I-QH) transition, is observed. By analyzing the amplitudes of the magnetoresistivity oscillations, we are able to measure the quantu...

1999
A. Saxler P. Debray R. Perrin S. Elhamri W. C. Mitchel C. R. Elsass I. P. Smorchkova B. Heying E. Haus P. Fini J. P. Ibbetson S. Keller P. M. Petroff S. P. DenBaars J. S. Speck

An AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1x10 cm and a mobility of 1.9 x 10 cm/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible...

2013
Albert Wang Thomas Kosel Debdeep Jena

In this work, the growth of InN on GaN substrates by molecular beam epitaxy and the structural and electrical characterization are presented. The quality of InN is found to be a sensitive function of the III/V flux ratio and the substrate temperature. The structural quality of InN is characterized by X-ray diffraction, and the transport property is characterized by Hall effect measurements. An ...

2011
S Sahoo

Graphene is the recently discovered two-dimensional (2D) one atom thick allotrope of carbon. Electrons in graphene, obeying a linear dispersion relation, behave like massless relativistic particles. It is a 2D nanomaterial with many peculiar properties. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit intrinsic mobility and can travel micr...

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