نتایج جستجو برای: hfcvd
تعداد نتایج: 63 فیلتر نتایج به سال:
Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were characterized with field emission scanning electron microscopy (FE-SEM), Raman spectrum, and X-ra...
Diamond coatings were successfully deposited on tool steel substrates without using any external diffusion barrier layers. The diamond film deposition was performed in a hot filament chemical vapour deposition (HFCVD) reactor. In the first step, a high substrate temperature and a high methane percentage were used to achieve a faster critical carbon concentration and hence a shorter incubation t...
This review focuses on describing the fundamental/applied materials science and technological applications of a transformational multifunctional diamond-based material named ultrananocrytalline diamond (UNCDTM) in film form. The UNCDTM films are synthesized using microwave plasma chemical vapor deposition (MPCVD) hot filament (HFCVD), via patented Ar/CH4 gas flown into air evacuated chambers, ...
Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD
UNLABELLED In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a...
Ultrananocrystalline diamond (UNCD) films are promising for radio frequency micro electro mechanical systems (RF-MEMS) resonators due to the extraordinary physical properties of diamond, such as high Young’s modulus, quality factor, and stable surface chemistry. UNCD films used for this study are grown on 150 mm silicon wafers using hot filament chemical vapor deposition (HFCVD) at 680°C. UNCD ...
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