نتایج جستجو برای: high electron mobility transistor

تعداد نتایج: 2357262  

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

Journal: :IEICE Transactions 2011
Jungwoo Oh Jeff Huang Injo Ok Se-Hoon Lee Paul D. Kirsch Raj Jammy Hi-Deok Lee

We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technolog...

Journal: :CoRR 2013
Safeeullah Soomro Adnan Alam Khan Abdul Ghafoor Memon Asim Iftikhar Maree Mujeeb-u-Rehman

1. INTRODUCTION Wireless networks are economical and portable. It market ratio is 1:3. Wireless networks are famous among consumers due to secure, reliable, robust and portable connections. WiMax network is one of the famous networks among users; it is provides excellent multimedia services. WiMax is a (Worldwide Interoperability for Microwave Access) which is IEEE 802.16 standard supports lice...

2002
Tamotsu Kimura

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

1996
A. Dimoulas J. Davidow K. P. Giapis

The effects of the channel electron density on the interband optical transitions of strained (x50.6 and 0.65! and lattice-matched (x50.53) InxGa12xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate est...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - دانشکده علوم 1390

in this thesis, a better reaction conditions for the synthesis of spirobarbiturates catalyzed by task-specific ionic liquid (2-hydroxy-n-(2-hydroxyethyl)-n,n-dimethylethanaminium formate), calcium hypochlorite ca(ocl)2 or n-bromosuccinimide (nbs) in the presence of water at room temperature by ultrasonic technique is provided. the design and synthesis of spirocycles is a challenging task becaus...

2014
Jin-Peng Yang Qi-Jun Sun Keiichirou Yonezawa Alexander Hinderhofer Alexander Gerlach Katharina Broch Fabio Bussolotti Xu Gao Yanqing Li Jianxin Tang Frank Schreiber Nobuo Ueno Sui-Dong Wang Satoshi Kera

C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (111) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21 cm V 1 s 1 to 2.92 cm V 1 s 1 by inserting the template-DIP layer. M...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید