نتایج جستجو برای: microwave output power
تعداد نتایج: 684725 فیلتر نتایج به سال:
A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base–emitter diode of an active bias transistor and a capacitor to provi...
A large, ultra lightweight space structure, such as solar sails and Gossamer spacecrafts, requires a distributed power source to alleviate wire networks, unlike the localized on-board power infrastructures typically found in most small spacecrafts. The concept of microwave-driven multifunctional capability for membrane structures is envisioned as the best option to alleviate the complexity asso...
BACKGROUND For complete tumor ablation in different tissues, it is necessary to investigate the exact coagulation zone of microwave ablation in different tissues. The aim of this study was to compare the extent of microwave ablation zone in muscle, liver and adipose tissue in ex vivo porcine models and assess the shape of microwave coagulation zone among these tissues. MATERIALS AND METHODS M...
Microwave and Millimeter-wave Rectifying Circuit Arrays and Ultra-wideband Antennas for Wireless Power Transmission and Communications. (May 2007) Yu-Jiun Ren, B.S., National Chung-Hsing University; M.S., National Chiao-Tung University Chair of Advisory Committee: Dr. Kai Chang In the future, space solar power transmission and wireless power transmission will play an important role in gathering...
Heterostructure field effect transistors (HFETs) are based on AlGaN/GaN heterostructures which offer excellent electronic properties for the development of faster, heat-resistant , energy efficient transistors and application in microwave-power amplifiers [1,2]. The outstanding device performance in cut-off frequency, breakdown voltage, and device output power [3,4]. However, the comparatively ...
AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...
This letter describes the use of a power-optimized cascode configuration for obtaining maximum output power at millimeter-wave (mm-wave) frequencies for a two-way combined power amplifier (PA). The PA has been fabricated in a high-speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 lm2. The experimental results demonstrate a small signal gai...
A dynamic bias technology is proposed to meet linearity standards at high-power levels and simultaneously reduce power consumption at low-power output levels for a mobile WiMAX terminal application. The dynamic bias circuit induces voltage via the current from the source port of the final active stage, and makes the bias operate the PA dynamically as the output power level is increased. The fab...
The purpose of the radiometer project was to research and demonstrate the working principles of a radiometer system. The radiometer design team was composed of five members, each contributing a specific component to the final system. A radiometer system is a device that detects microwave emissions from noise producing objects [1]. These noise sources are typically objects that emit heat and the...
the graphical technique for nonlinear circuits was described that enable us to optimize circuits to obtain maximum output power, maximum efficiency or minimum intermodulation. according to this method a high power amplifier in the ka band was designed. using a nonlinear model of the transistor, optimum slope for load-line was determined so that maximum power at the output was obtainable, then ...
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