نتایج جستجو برای: mosfet device
تعداد نتایج: 680832 فیلتر نتایج به سال:
In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material wo...
Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...
Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...
A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance fabricated phosphorus (P)-doped n-type body. N2 used fo...
High performance PMOSFETs with a gate length as short as 18-nm are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect. The 45 nm gate-length PMOS FinFET has an Idsat of 410 PA/Pm (or 820 PA/Pm depending on the definition of the width of a double-gate device) at Vd = Vg = 1.2 V and Tox = 2.5 nm. The quasi-planar nature of this variant of t...
In this paper, quantum mechanical effects on nanoscale MOSFET devices are investigated through compact physical models. These models cover quantum mechanical influences on device parameters including long-channel threshold voltage shift, gate capacitance degradation, deteriorated short channel effects and sub-threshold slope. In-depth understanding of device characteristic modification brought ...
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As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
The use of nanometer CMOS technologies (below 90nm) however brings along significant challenges for circuit design (both analog and digital). By reducing the dimensions of transistors many physical phenomenon like gate leakage, drain induced barrier lowering and many more effects comes into picture. Reducing the feature size in the technology of device with the addition of ever more interconnec...
Progress in CMOS device technology has motivated the design of high-performance analog integrated circuits in standard CMOS processes. In particular, the high speed of submicron CMOS devices make them attractive for a variety of analog applications, including data converters, switched capacitor circuits, and low noise amplifiers [1,2,16]. However, recent reports have indicated that the measured...
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