Numerical modeling of polycrystalline thin-film solar cell serves as an imperative procedure to test the suitability of proposed physical clarification and to anticipate the effect of physical changes on cell performance. All in all, this must be conducted with only partial knowledge of input parameters. In this paper, we evaluated the numerical simulation of CdS/CIGS tandem multi junction sola...

Multi-junction solar cells play a crucial role in the ConcentratedPhotovoltaic (CPV) Systems. Recent developments in CPV concerning high powerproduction and cost effective-ness along with better efficiency are due to theadvancements in multi-junction cells. This paper presents a simulation model of thegeneralized Multi-junction solar cell and introduces a two-bond solar ...

The lack of space inversion symmetry endows non-centrosymmetric superconducting materials with various interesting parity-breaking phenomena, including the anomalous Josephson effect. Our paper considers a junction two superconductors connected by uniaxial ferromagnet. We show that this “Chiral Magnetic junction” (CMJ junction) exhibits direct analog Chiral Effect, which has already been observ...

Organic–inorganic metal halide perovskite solar cells represent the fastest advancing cell technology in terms of energy conversion efficiency improvement, as seen last decade. This has become a promising for next-generation, low-cost, high-efficiency photovoltaics including multi-junction tandem concepts. Double-junction have much higher limits 45%, beyond Shockley–Queisser single-junction cel...

We report a novel droplet breakup regime in the microfluidics T-junction, where new interfaces are created two arm channels, rather than at center of junction. show that there is different hydrodynamic root for this regime, and propose simple geometric rule which enables compared to classical T-junction. A dynamic model lower capillary number (Ca) developed predict process. also higher Ca centr...

This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully dep...