This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs ...

This paper features a radical and highly accurate method of designing a microwave amplifier. A Full-wave Electromagnetic Simulator, which is based on the Methodof-Moments (MoM) numerical method, is used in parallel with the conventional microwave circuit simulator to demonstrate a superior performance outcome such as Stability, Return Loss and Small Signal Gain. This method known as EM/Circuit ...

Today’s GaAs PHEMTs make it possible to cover applications of an extremely wide frequency range, as high as 100 GHz, with a single device type. In this paper, a set of models and calibrations for the predictive device simulation of GaAs PHEMTs is developed. The simulation setup includes a description of the device geometry. In particular, a realistic representation of the region between the ohm...

The output power performance of 0.50 um dual recessed pHEMT MMICs designed with current limited load lines strongly depends on the RF current swing of the device. What might seem a sufficient DC Imax of a given sample might not necessarily indicate the intrinsic output power capability of the device. The position and electrochemistry of the wide recess surface were demonstrated as important fac...