نتایج جستجو برای: photo transistor

تعداد نتایج: 46866  

2012
Chang-Beom Kim Cheol-Joo Chae Hye-Rim Shin Ki-Bong Song

The existence of beta-amyloid [Aβ] peptides in the brain has been regarded as the most archetypal biomarker of Alzheimer's disease [AD]. Recently, an early clinical diagnosis has been considered a great importance in identifying people who are at high risk of AD. However, no microscale electronic sensing devices for the detection of Aβ peptides have been developed yet. In this study, we propose...

Journal: :IEICE Transactions 2007
Mitsuhiro Hanabe Yahya Moubarak Meziani Taiichi Otsuji Eiichi Sano Tanemasa Asano

We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A ve...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم پایه 1392

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Journal: :Scientific reports 2016
Georgies Alene Asres Aron Dombovari Teemu Sipola Robert Puskás Akos Kukovecz Zoltán Kónya Alexey Popov Jhih-Fong Lin Gabriela S Lorite Melinda Mohl Geza Toth Anita Lloyd Spetz Krisztian Kordas

In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative tempe...

2013
Seongjae Cho Hyungjin Kim S. J. Ben Yoo Byung-Gook Park James S. Harris

Optical and electronic devices for optoelectronic integrated circuits have been extensively studied, and now, more efforts for the conversion between optical and electrical signals are accordingly required. In this work, a silicon (Si)-compatible optically drivable III-V-on-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is studied by simulation. The proposed optoelectronic device...

2014
Subal Kar Madhuja Ghosh Soumik Das Antara Saha

A novel technique has been developed to generate ultra-stable millimeter-wave signal by optical heterodyning of the output from two slave laser (SL) sources injection-locked to the sidebands of a frequency modulated (FM) master laser (ML). Precise thermal tuning of the SL sources is required to lock the particular slave laser frequency to the desired FM sidebands of the ML. The output signals f...

2012
C. M. M. Paschoal M. L. Sobrinho D. do N. Souza J. Antônio Filho L. A. P. Santos

Computed tomography (CT) dosimetry normally uses an ionization chamber 100 mm long to estimate the computed tomography dose index (CTDI), however some reports have already indicated that small devices could replace the long ion chamber to improve quality assurance procedures in CT dosimetry. This paper presents a novel dosimetry system based in a commercial phototransistor evaluated for CT dosi...

2014
Eunha Lee Anass Benayad Taeho Shin HyungIk Lee Dong-Su Ko Tae Sang Kim Kyoung Seok Son Myungkwan Ryu Sanghun Jeon Gyeong-Su Park

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3-10 cm(2)/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm(2)/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be ta...

2008
A. Takagi I. Sugai Y. Irie Y. Takeda

Thick carbon foils (>300 mg/cm)has been used for stripping of H ion beam into protons at the injection stage of the 3GeV Rapid Cycling Synchrotron (3GeV-RCS) in J-PARC. The carbon stripper foils with high durability at high temperature >1800 oK are strongly required. A new irradiation system for foils is in progress using the KEK 650keV Cockcroft-Walton accelerator which can simulate the high-e...

1999
Z. P. Jiang P. B. Fischer S. Y. Chou M. I. Nathan

A standard Gacs11ne4sP/GaAs modulation-doped field-effect transistor (MODFET) structure and a novel Gacs11nc4sP/GaAs MODFET structure where the GacslIne4sP spacer layer was replaced by an undoped AlO,sGac,As layer were grown using a gas source molecular beam epitaxy. The Hall mobility of the novel MODFET’s structures are 6600 and 36 400 cm2/V s at room temperature and 77 K, respectively, which ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید