نتایج جستجو برای: plasma etching
تعداد نتایج: 364003 فیلتر نتایج به سال:
Plasma etching (or dry etching) is widely used in the fabrication of integrated circuits (IC). Anisotropic features are easily obtained by controlling reactive ion trajectories in plasma. Twisting and bowing are two main issues during high aspect ratio (HAR) feature etching. Twisting is, instead of a feature etching vertically, the feature twists or turns to the side. Mixing damage by ion bomba...
In paper the influence of parameters inductively coupled chloropentafluoroethane plasma on rate and characteristics gallium arsenide etching was studied. Etched GaAs profiles by white light interferometry scanning electron microscopy were investigated. It turned out that process does not depend freon flow, but forward inductive power, as well pressure determined. this case, when power generator...
Plasma etching of lithium niobate with fluorine gases is limited by the redeposition LiF. This results in a low etch rate and nonvertically etched walls. Etching of proton-exchanged lithium niobate can prevent the LiF deposition to a large extent because of the greatly reduced lithium concentration in lithium niobate. We performed different inductively coupled plasma etching processes using SF6...
Silica glass is frequently used as a device material for micro/nano fluidic devices due to its excellent properties, such as transparency and chemical resistance. Wet etching by hydrofluoric acid and dry etching by neutral loop discharge (NLD) plasma etching are currently used to micromachine glass to form micro/nano fluidic channels. Electro-osmotic flow (EOF) is one of the most effective meth...
The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...
This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of S...
Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...
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