A square-loop slot antenna, printed at the back surface of an extended hemispherical lens, is examined as a candidate for ( ) millimeter-wä e mm-wa ̈e integrated-circuit Schottky-diode mixers. The loop slot is etched in a microwä e substrate, and coupled to a microstrip line section printed on the other side of the substrate. A Schottky barrier diode shunted to ground is the mixing de ̈ice. The i...

a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

2014 A Schottky diode exhibits a barrier height which increases when the semiconductor doping is superficially inversed. This effect is modellized, so as to show the influence of the main parameters : doping and thickness of the inversion layer, interface state configuration, metal work function. The analysis of a few available experimental results is consistent with the assumption that the int...

In this paper, we present and analyze the most fundamental constraint of RFID systems, power rectification. This issue plays an important role in development of long-range RFID systems. Rectifiers are the key components in power rectifications and efficiency of an RFID system. Therefore this paper is concentrated in investigating this major issue. To tackle this problem a novel Schottky Barrier...

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum effic...

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 ̋C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data wa...